Room temperature x-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier
Abstract
An x-ray spectrograph operating at room temperature was designed and tested. It consists of a small area (1 sq mm) silicon diode detector on a high resistivity bulk and an ultra low noise preamplifier. A resolution of 61 root mean square electrons (517 eV FWHM) was measured at 297 K, 34 root mean square electrons (288 eV FWHM) at 223 K. The limits and perspectives for room temperature operation of silicon planar diode detectors and related front end electronics are highlighted.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- 1994
- Bibcode:
- 1994STIN...9434959B
- Keywords:
-
- Low Noise;
- Preamplifiers;
- Radiation Detectors;
- Room Temperature;
- Silicon Radiation Detectors;
- X Ray Detectors;
- X Ray Spectroscopy;
- Electrical Engineering;
- Electromagnetic Noise;
- Field Effect Transistors;
- Junction Diodes;
- Silicon Junctions;
- Instrumentation and Photography