Preparation and characterization of tungsten tips for scanning tunneling microscopy
Abstract
Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (∼10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide.
- Publication:
-
Review of Scientific Instruments
- Pub Date:
- May 1994
- DOI:
- 10.1063/1.1144891
- Bibcode:
- 1994RScI...65.1558C