Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation
Abstract
Crystallographic defects present in thermal oxidised SIMOX materials have been studied by means of plan view transmission electron microscopy (TEM) and chemical defect etching. It is observed that the presence of small stacking fault tetrahedra near the top Si/SiO 2 interface influence the formation of oxidation induced stacking faults (OISF). An explanation for this behaviour is given based on the assumption that these small Crystallographic defects contribute to the recombination of silicon interstitials emitted during thermal oxidation.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- February 1994
- DOI:
- 10.1016/0168-583X(94)95763-0
- Bibcode:
- 1994NIMPB..84..242G