An a-Si:H gas microstrip detector
Abstract
Novel gas microstrip detectors based on a layer of hydrogenated amorphous silicon (a-Si:H) have been built. Energy resolutions of 18% FWHM and gains of 1500 were measured with 5.9 keV X-rays from an 55Fe source. An attempt is made to understand the variations in gain and energy resolution observed as a function of various applied voltages and time. The effect of the backplane voltage on the electric field in the anode region is discussed by analogy with MOSFETs having a geometry similar to that of our detectors.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- January 1994
- DOI:
- 10.1016/0168-9002(94)91107-X
- Bibcode:
- 1994NIMPA.337..387S