Strain effects on refractive index and confinement factor of In(x) Ga(1-x)As laser diodes
Abstract
The effects of strain upon the bandgap energy, the refractive index, and the confinement factor of a SCH laser diode with In(x)Ga(1 - x)As as its active layer were investigated.
- Publication:
-
Microwave and Optical Technology Letters
- Pub Date:
- February 1994
- Bibcode:
- 1994MiOTL...7..113G
- Keywords:
-
- Confinement;
- Heterojunction Devices;
- Indium Gallium Arsenides;
- Quantum Wells;
- Refractivity;
- Semiconductor Lasers;
- Band Structure Of Solids;
- Energy Gaps (Solid State);
- Semiconductor Diodes;
- Lasers and Masers