Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication
Abstract
In this work the Si1- yC y random alloy is used as a starting point for the creation of nano particles of β-SiC with the same lattice orientation as the Si lattice in which they are grown. These nano particles are between 3 and 8 nm in diameter and are randomly dispersed throughout the Si1- yC y region, where 0.005<y<0.05. This ability to produce quantum antidots of wide bandgap material within the Si matrix should enable the exploration of mesoscopic phenomena.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- April 1994
- DOI:
- 10.1143/JJAP.33.2392
- Bibcode:
- 1994JaJAP..33.2392P