Metal (CoSi2) Insulator (CaF2) resonant tunneling diode
Abstract
Negative differential resistance (NDR) of nanometer-thick triple-barrier metal CoSi2/insulator CaF2 resonant tunneling diode (RTD) and the structure dependence of its characteristics are demonstrated. The device consists of metal-insulator (M-I) heterostructures with two metallic CoSi2) quantum wells and three insulator CaF2 barriers.
- Publication:
-
Japanese Journal of Applied Physics Regular Papers Short Notes and Review Papers
- Pub Date:
- January 1994
- Bibcode:
- 1994JJAPR..33...57S
- Keywords:
-
- Calcium Fluorides;
- Diodes;
- Insulators;
- Quantum Wells;
- Resonant Tunneling;
- Semiconductor Diodes;
- Crystal Growth;
- Tunnel Diodes;
- Electronics and Electrical Engineering