Arsenic pressure dependence of surface diffusion of Ga on nonplanar GaAs substrates
Abstract
The arsenic pressure dependence of Ga adatom surface diffusion in molecular beam epitaxy (MBE) on nonplanar substrates was investigated. The surface diffusion length Ga adatom incorporation on the (001) surface derived from the distribution is on the order of micrometers and it shows a strong dependence on arsenic pressure. A simple model based on one-dimensional surface diffusion was proposed. With this theory, the lifetime of Ga adatom incorporation on other surfaces is obtained.
- Publication:
-
Japanese Journal of Applied Physics Regular Papers Short Notes and Review Papers
- Pub Date:
- January 1994
- Bibcode:
- 1994JJAPR..33...11S
- Keywords:
-
- Arsenic;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Pressure Dependence;
- Substrates;
- Surface Diffusion;
- Adsorption;
- Atoms;
- Diffusion Length;
- Electronics and Electrical Engineering