Determination of Generation Lifetime in Trap-Rich and Layered Semiconductors by Metal-Oxide- Semiconductor Measurements
Abstract
The dispersion of metal-oxide semiconductor capacitance, C(omega), or of the normalized conductance, G(omega)/omega, is measured at a fixed inversion bias. A theory has been developed which relates the frequency f* at which the step of the capacitance or the maximum of G(omega)/omega occurs to the minority carrier generation lifetime. The technique can be applied to trap-rich and nonhomogeneously doped semiconductor material. We have used it for the special case of trap-rich n(-)/n(+) amorphous silicon (a-Si). The resulting generation lifetime turns out to be 3.5 x 10(exp -13) s.
- Publication:
-
Journal of the Electrochemical Society
- Pub Date:
- August 1994
- DOI:
- 10.1149/1.2055077
- Bibcode:
- 1994JElS..141.2151F
- Keywords:
-
- Additives;
- Capacitance;
- Electrical Resistance;
- Metal Oxide Semiconductors;
- Minority Carriers;
- Silicon;
- Amorphous Materials;
- Electron Energy;
- Energy Levels;
- Semiconducting Films;
- Substrates;
- Electronics and Electrical Engineering