In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
Abstract
Processing of III-V compound semiconductor devices in an ultra-high vacuum or a controlled environment has received much attention during the past few years. Major advantages ofn- situ processing include the preservation of pristine material surface, improved device performance, and fabrication of novel devices. This paper reviews anin- situ process compatible with molecular beam epitaxy (MBE) with emphasis on the removal of oxides and surface contaminants from air-exposed GaAs and AIGaAs. We have characterized deep-etched and MBE regrown AIGaAs with the etching achieved using electron cyclotron resonance plasma treatment. A buried heterostructure vertical-cavity surface emitting laser diode fabricated using thisin- situ process is presented.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- July 1994
- DOI:
- 10.1007/BF02653348
- Bibcode:
- 1994JEMat..23..625H
- Keywords:
-
- Compound semiconductors;
- in- situ process;
- molecular beam epitaxy