Growth by molecular-beam epitaxy and photoluminescence of InGaAs/GaAs quantum wells on GaAs (111)A substrates
Abstract
In0.18Ga0.82As/GaAs single quantum wells (SQWs) were grown on GaAs (111)A just, 1° and 5° off toward [110]- and [001]- and (100)-oriented substrates. Photoluminescence (PL) peaks from SQWs grown on GaAs (111)A just and misoriented substrates show a large full width at half-maximum and redshift as compared with calculated values. The quantum-confined Stark effect due to strain-induced electric fields is the main cause of this redshift in samples grown on GaAs (111)A 5° off toward [001] substrates. The larger redshift observed in samples grown on the other GaAs (111)A substrates is due to strain relaxation. A strain relaxation mechanism that consists of coherently grown islands when InGaAs growth begins and the generation of misfit dislocations when these islands coalesce gives a qualitative explanation of the observed results.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- December 1994
- DOI:
- 10.1063/1.357923
- Bibcode:
- 1994JAP....76.8037V
- Keywords:
-
- Crystal Growth;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Photoluminescence;
- Quantum Wells;
- Substrates;
- Dislocations (Materials);
- Orientation;
- Red Shift;
- Stark Effect;
- Strain Measurement;
- Stress Relaxation;
- Solid-State Physics