Application of test method 1019.4 to nonhardened power MOSFETs
Abstract
The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of nonhardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual /spl Delta/V/sub T/ due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- June 1994
- DOI:
- 10.1109/23.299798
- Bibcode:
- 1994ITNS...41..555K
- Keywords:
-
- Annealing;
- Field Effect Transistors;
- Irradiation;
- Metal Oxide Semiconductors;
- Radiation Dosage;
- Radiation Effects;
- Electronic Equipment Tests;
- Gates (Circuits);
- Temperature Effects;
- Threshold Voltage;
- Electronics and Electrical Engineering