Strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition
Abstract
Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- November 1994
- DOI:
- 10.1109/68.334816
- Bibcode:
- 1994IPTL....6.1289O
- Keywords:
-
- Gallium Arsenides;
- Light Emitting Diodes;
- Metalorganic Chemical Vapor Deposition;
- Oxides;
- Quantum Well Lasers;
- Spectral Emission;
- Spectrum Analysis;
- Energy Levels;
- Masks;
- Thickness;
- Electronics and Electrical Engineering