Tensile-strained multiple quantum-well structures for a large refractive index change caused by current injection
Abstract
Tensile-strained multiple quantum-well (MQW) structures with camel-back shaped first valence sub-bands are proposed as structures with a large refractive index change caused by current injection. These structures have a high joint density of states at the absorption edge, and the injected carriers in the structures have a long lifetime because of separation in the k-space between electrons and holes. The refractive index change caused by current injection is calculated for camel-back InGaAs/InGaAsP strained MQW structures for 1.55 micron-wavelength light. These structures show a larger refractive index change than the other InGaAs/InGaAsP strained/unstrained MQW structures.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- September 1994
- DOI:
- 10.1109/68.324681
- Bibcode:
- 1994IPTL....6.1101K
- Keywords:
-
- Carrier Injection;
- Charge Carriers;
- Electron Transfer;
- Gallium Phosphides;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Quantum Wells;
- Refractivity;
- Semiconductor Lasers;
- Tensile Stress;
- Band Structure Of Solids;
- Electromagnetism;
- Ohmic Dissipation;
- Strain Measurement;
- Transport Properties;
- Lasers and Masers