Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes
Abstract
The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3 x 10(exp 12) cm(exp -2)) and high field InP thickness (0.09-0.62 microns). It is found that the effective k of 0.48 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85 C.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- May 1994
- DOI:
- 10.1109/68.285563
- Bibcode:
- 1994IPTL....6..632Y
- Keywords:
-
- Avalanche Diodes;
- Indium Gallium Arsenides;
- Indium Phosphides;
- Photodiodes;
- Film Thickness;
- Performance Tests;
- Temperature Dependence;
- Electronics and Electrical Engineering