High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition
Abstract
Low-threshold-current single-quantum-well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, a buried heterostructure laser with natural current blocking p-n-p-n junction is formed by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%) and high T sub 0 (150 K). High reflection coated laser (95%/95%) have CW threshold current as low as 0.28 mA.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- April 1994
- DOI:
- 10.1109/68.281798
- Bibcode:
- 1994IPTL....6..468Z
- Keywords:
-
- Doped Crystals;
- Gallium Arsenides;
- Indium Gallium Arsenides;
- Metalorganic Chemical Vapor Deposition;
- P-N-P-N Junctions;
- Quantum Wells;
- Semiconductor Lasers;
- Continuous Radiation;
- Flat Surfaces;
- Threshold Currents;
- Lasers and Masers