Structure-dependence of the chirp-to-power ratio spectrum for GaAs external cavity lasers
Abstract
The chirp-to-power ratio (CPR) spectrum has been modeled for GaAs quantum well external cavity lasers. The model includes effects of transverse carrier spatial hole burning, finite carrier transport and capture time from the separate-confinement-heterostructure (SCH) region to the quantum well region, and intrinsic material gain compression. The model explains the measured difference of the phase of the CPR at low modulation frequencies between GaAs quantum well and channel-substrate planar (CSP) lasers both in extended cavities. Our results indicate that the carrier effect in the SCH region can make a major contribution to the CPR.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- March 1994
- DOI:
- 10.1109/68.275488
- Bibcode:
- 1994IPTL....6..359H
- Keywords:
-
- Gallium Arsenides;
- Laser Applications;
- Laser Cavities;
- Semiconductor Lasers;
- Hole Burning;
- Quantum Well Lasers;
- Quantum Wells;
- Spectrum Analysis;
- Lasers and Masers