High temperature operation of circular-grating surface-emitting DBR lasers fabricated on an InGaAs/GaAs structure
Abstract
We demonstrate high temperature operation of circular-grating surface-emitting distributed Bragg reflector lasers. The structure is a strained InGaAs/GaAs double quantum well. Circular gratings are defined by electron beam lithography. No epitaxial regrowth is used. A surface emission power of over 40 mW under pulsed operation at temperatures of up to 80 deg C is obtained without saturation. A fixed single mode operation was achieved over a temperature range of 60 degrees.
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- March 1994
- DOI:
- 10.1109/68.275479
- Bibcode:
- 1994IPTL....6..326F
- Keywords:
-
- Dbr Lasers;
- Semiconductor Lasers;
- Surface Emitting Lasers;
- Electron Beams;
- Gallium Arsenides;
- Gratings (Spectra);
- High Temperature;
- Lithography;
- Quantum Wells;
- Scanning Electron Microscopy;
- Semiconductors (Materials);
- Lasers and Masers