High-frequency fifth order switched-current bilinear elliptic lowpass filter
Abstract
Design considerations for and measured results of a prototype high-frequency fifth order switched-current bilinear elliptic lowpass filter are presented in this paper. The prototype filter was implemented on a standard 1.2 micrometer double-metal single-polysilicon CMOS process and occupied a total die area of 1.5 sq mm. When clocked at 2 MHz, the filter achieved a passband edge of 350 kHz, a stopband edge of 420 kHz, a passband ripple of 0.6 dB and a minimum stopband attenuation of 26 dB. With a single 5 V power supply the filter consumed 28 mW.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- June 1994
- DOI:
- 10.1109/4.293122
- Bibcode:
- 1994IJSSC..29..737B
- Keywords:
-
- Cmos;
- Design Analysis;
- Integrated Circuits;
- Low Pass Filters;
- Mathematical Models;
- Network Analysis;
- Silicon Polymers;
- Electronics and Electrical Engineering