Far infrared surface electromagnetic waves propagation on A3B5 semiconductors
Abstract
The real and imaginary parts of surface electromagnetic waves (SEW) refraction index nef in n-type InSb, GaAs and InP have been measured in FIR region (ν=85‑142 cm‑1). The nef measurements allowed to determine plasma frequency νp and plasmon damping γ. The obtained nonlinear SEW propagation distance L dependence on Te impurity concentration in GaAs (N=1017‑1019 cm‑3) was explained taking into account the conduction band nonparabolity as well as the presence of isostructural phase transition at N=2×1010 cm‑3.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- January 1994
- DOI:
- 10.1007/BF02265892
- Bibcode:
- 1994IJIMW..15..303V
- Keywords:
-
- Electromagnetic Radiation;
- Far Infrared Radiation;
- Gallium Arsenides;
- Indium Antimonides;
- Indium Phosphates;
- N-Type Semiconductors;
- Refractivity;
- Surface Waves;
- Wave Propagation;
- Conduction Bands;
- Damping;
- Impurities;
- Nonlinearity;
- Phase Transformations;
- Plasma Frequencies;
- Plasmons;
- Technetium;
- Communications and Radar;
- Phase Transition;
- GaAs;
- Wave Propagation;
- Refraction;
- Conduction Band