Submicron-square emitter AlGaAs/GaAs HBT's with AlGaAs hetero-guardring
Abstract
Successful operation of submicron-square emitter AlGaAs/GaAs HBT's is demonstrated for the first time by using a fully mesa-structure-type emitter-base junction-area definition method with an AlGaAs hetero-guard-ring. The hetero-guard-ring reduces surface recombination current at the emitter-mesa edge to 1.4 mu A/micron. This is 1/10 of that for devices without the guard-ring. Here, dc gains of 20, 26, and 40 are achieved for 0.5 micron x 0.5 micron, 0.7 micron x 0.7 micron, and 0.9 micron x 0.9 micron emitter HBT's respectively. An f(sub T) of 40 GHz and an f(sub max) of 30 GHz are obtained for 0.9 micron x 0.9 micron at a J(sub C) of 1.0 x 10(exp 5) A/cm(exp 2).
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- February 1994
- DOI:
- 10.1109/55.285371
- Bibcode:
- 1994IEDL...15...66U
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Emitters;
- Gallium Arsenides;
- Heterojunctions;
- Ring Structures;
- Electron Recombination;
- Semiconductors (Materials);
- Electronics and Electrical Engineering