Experimental high performance sub-0.1 micron channel nMOSFET's
Abstract
Very high performance sub-0.1 micron channel nMOSFET's are fabricated with 35 angstrom gate oxide and shallow source-drain extensions. An 8.8 ps/stage delay at V(sub dd) = 1.5 V is recorded from a 0.08 micron channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silicon devices at these temperatures. Cutoff frequencies (f(sub T)) of a 0.08 micron channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respectively. Record saturation transconductances, 740 mS/mm at 300 K and 1040 mS/mm at 85 K, are obtained from a 0.05 micron channel device. Good subthreshold characteristics are achieved for 0.09 micron channel devices with a source-drain halo process.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1994
- DOI:
- 10.1109/55.289472
- Bibcode:
- 1994IEDL...15...28M
- Keywords:
-
- Field Effect Transistors;
- Gates (Circuits);
- Metal Oxide Semiconductors;
- Oscillators;
- Silicon;
- Switching;
- Electronics and Electrical Engineering