Novel GaAs heterojunction bipolar transistors using In(0.5)Al(0.5)P as emitter
Abstract
We report the fabrication and characterization of the first single and double In(0.5)Al(0.5)P/GaAs heterojunction bipolar transistors (HBT's). These HBT's are grown by gas-source molecular beam epitaxy. The In(0.5)Al(0.5)P/GaAs heterostructure has the largest valence band discontinuity among all III-IV semiconductor heterojunctions lattice-matched to GaAs. Common-emitter dc current gains as high as 300 and 400 are measured for SHBT's and DHBT's, respectively, with base doping of 1 x 10(exp 19) cm(exp -3). The corresponding offset voltage is 80 and 120 mV, respectively. These results demonstrate the advantages of the In(0.5)Al(0.5)P/GaAs band alignment and make the new HBT's attractive candidates for high-speed digital circuit applications.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1994
- DOI:
- 10.1109/55.289477
- Bibcode:
- 1994IEDL...15...13K
- Keywords:
-
- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunctions;
- Molecular Beam Epitaxy;
- Semiconductors (Materials);
- Additives;
- Digital Electronics;
- Emitters;
- Indium Phosphides;
- Logic Circuits;
- Electronics and Electrical Engineering