Electrical characterisation of Ti Schottky barriers on n-type GaN
Abstract
The Schottky barrier height of Ti on n-type GaN has been measured to be 0.58 and 0.59 eV by capacitance-voltage and current-voltage techniques, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than that of Au. This supports the prediction that the Fermi level is not pinned at the GaN surface.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1994
- DOI:
- 10.1049/el:19940565
- Bibcode:
- 1994ElL....30..909B
- Keywords:
-
- Barrier Layers;
- Capacitance-Voltage Characteristics;
- Gallium Nitrides;
- Metal Films;
- N-Type Semiconductors;
- Schottky Diodes;
- Titanium;
- Volt-Ampere Characteristics;
- Deposition;
- Electron Energy;
- Epitaxy;
- Hall Effect;
- Metallizing;
- Electronics and Electrical Engineering