Insight into criteria for design optimization of Bistable Field Effect Transistor (BISFET)
Abstract
The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported for the first time. The hysteresis in the previously-reported source-loop transitions is found to increase from 0.5 V to 1 V with a negative collector bias, and the switching ratio increases from 1.5 to nearly 2. This suggests important criteria for design optimization which dramatically enhance the potential of the BISFET for practical applications.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1994
- Bibcode:
- 1994ElL....30..822O
- Keywords:
-
- Aluminum Gallium Arsenides;
- Design Analysis;
- Field Effect Transistors;
- Gallium Arsenides;
- Optimization;
- Semiconductors (Materials);
- Stability;
- Accumulators;
- Bias;
- Hysteresis;
- Switching;
- Electronics and Electrical Engineering