3.3 V operation GaAs power MESFETs with 65% power-added efficiency for hand-held telephones
Abstract
High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3 V have been developed. The MESFETs with 0.6 micron gate length and 12 mm gate width show a maximum drain current density of 310 mA/mm and a uniform transconductance of around 112 mS, ranging from V(sub gs) = - 1.8 V to 0.5 V. The device tested at 3.3 V drain bias and 900 MHz demonstrates an output power of 30.9 dBm with associate power-added-efficiency of 65 percent for an input power of 20dBm.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1994
- Bibcode:
- 1994ElL....30..739L
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Radiotelephones;
- Communication Networks;
- Current Density;
- Transconductance;
- Electronics and Electrical Engineering