Low temperature direct bonding of non-hydrophilic surfaces
Abstract
The authors have found that extremely strong bonds can be formed between wafer surfaces of LPCVD silicon dioxide after a dry plasma pretreatment. The bonded wafers were examined for bond yield, interfacial quality, and mechanical strength. Preliminary results indicate that successful low-temperature bonds can be formed to non-hydrophilic surfaces.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1994
- Bibcode:
- 1994ElL....30..693W
- Keywords:
-
- Bonding;
- Integrated Circuits;
- Silicon Dioxide;
- Vapor Deposition;
- Interfaces;
- Low Temperature;
- Pretreatment;
- Wafers;
- Electronics and Electrical Engineering