Amorphous silicon/amorphous silicon carbide heterojunctions applied to memory device structures
Abstract
It has been proposed and experimentally confirmed that band-engineered hydrogenated amorphous silicon (a-Si:H)/hydrogenated amorphous silicon carbide (a-SiC:H) heterojunction on c-Si can be applied to electrically programmable and erasable memory devices. A test diode with the structure c-Si/graded a-SiC:H/a-Si:H/uniform a-SICK/Al exhibits a large hysteresis in the C-V characteristic with a retention time of 0.8s at room temperature.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1994
- DOI:
- 10.1049/el:19940478
- Bibcode:
- 1994ElL....30..688S
- Keywords:
-
- Amorphous Silicon;
- Heterojunctions;
- Silicon Carbides;
- Computer Storage Devices;
- Hydrogenation;
- Hysteresis;
- Electronics and Electrical Engineering