Second generation single and two-step GaAs switched-current cells
Abstract
A second generation GaAs switched-current (SI) memory cell is proposed. Transmission errors are reduced by the introduction of a novel GaAs two-step S(sup 2)I cell, with simulated errors less than 0.05%.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1994
- Bibcode:
- 1994ElL....30..681X
- Keywords:
-
- Computer Storage Devices;
- Gallium Arsenides;
- Switching Circuits;
- Integrated Circuits;
- Mathematical Models;
- Memory (Computers);
- Semiconductor Devices;
- Electronics and Electrical Engineering