Common Themes and Mechanisms of Epitaxial Growth, volume 312
Abstract
Partial contents of these proceedings include: From Adatom Migration to Chemical Kinetics: Models for MBE, MOMBE and MOCVD; The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001); Evolution of Roughness on InP Layers Observed by Scanning Force Microscopy; Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure; Compositional Ordering in Semiconductor Alloys; Evolving Surface Cusps During Strained Layer Epitaxy; Effects of Minimizing the Driving Force for Epitaxy in the Ge/Si(001) System; A Comparison of Two Epitaxial Formation Mechanisms in the SiGe System; The Role of Vertical Exchange in the Growth of GaAs/AlAs Lateral and Vertical Superlattices; Surface Ordering of MBE Grown 001 Ga05A105As - A Theoretical Study; and Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films.
- Publication:
-
Symposium held in San Francisco
- Pub Date:
- April 1993
- Bibcode:
- 1993sfca.symp...13F
- Keywords:
-
- Adsorption;
- Crystal Structure;
- Epitaxy;
- Metalorganic Chemical Vapor Deposition;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Reaction Kinetics;
- Aluminum Arsenides;
- Gallium Arsenides;
- Indium Phosphides;
- Scanning Tunneling Microscopy;
- Solid-State Physics