Charge trapping and breakdown in N2O oxides
Abstract
Nitrided gate oxides have been fabricated by furnace oxidation in N2O with and without prior oxidation in O2. SIMS nitrogen profiles show a sharp peak at the Si-insulator interface for both processes. Improved breakdown characteristics and reduced oxide damage after irradiation and charge injection are obtained.
- Publication:
-
Presented at the International Reliability Physics Symposium
- Pub Date:
- August 1993
- Bibcode:
- 1993reph.symp...11S
- Keywords:
-
- Capacitors;
- Electric Charge;
- Nitriding;
- Nitrogen Oxides;
- Nitrous Oxides;
- Oxidation;
- Radiation Effects;
- Silicon Oxides;
- Transistors;
- Trapped Particles;
- Trapping;
- Damage;
- Fabrication;
- Furnaces;
- Injection;
- Insulators;
- Irradiation;
- Nitrogen;
- Electronics and Electrical Engineering