Developments in silicon carbide for aircraft propulsion system applications
Abstract
The physical and electrical properties of silicon carbide make it the foremost semiconductor material for high-temperature, radiation-resistant, and high-power electronic devices. These attributes make SiC particularly suitable for application to aircraft engines. Recent proof-of-concept efforts have verified SiC's potential. Field-effect transistors have shown high-temperature operating capability from 350 C to 650 C. JFETs, MOSFETs, and MESFETs have been fabricated. Ultraviolet photodiodes with high quantum efficiencies and extremely low dark currents have been fabricated and tested. Blue light-emitting diodes are for sale in production quantities as are one-inch diameter wafers. These developments have established a sufficient level of confidence to pursue the development of devices for aircraft-engine applications.
- Publication:
-
Joint Propulsion Conference and Exhibit
- Pub Date:
- June 1993
- Bibcode:
- 1993jpmc.confRU...P
- Keywords:
-
- Aircraft Engines;
- Engine Design;
- Engine Parts;
- Semiconductor Devices;
- Silicon Carbides;
- Field Effect Transistors;
- Photodiodes;
- Single Crystals;
- Wafers;
- Electronics and Electrical Engineering