Technical report of ISSP. Ser. A, no. 2674: High-field cyclotron resonance and impurity transition in n- and p-3C-SiC at magnetic fields up to 175 T

Magneto-transmission experiments have been carried out on 3C-SiC thin films grown on Si(100) substrates, using the combination of pulsed high magnetic fields up to 175 T generated by the single-turn coil technique and pulsed far-infrared radiations from an H2O(D2O) laser at photon energies up to 73.2 meV. In n-type 3C-SiC, two Cyclotron Resonance (CR) peaks have been observed for B parallel to k parallel to greater than 100 less than over a wide range of photon energy 10.4 - 53.8 meV, corresponding to the light- and heavy-mass valleys at the X-points, i.e., m(sub t)(sup *) = (0.25 +/- 0.01)m(sub 0) and (m(sub t)(sup *) m(sub 1)(sup *))(exp 1/2) = (0.41 +/- 0.01)m(sub 0). These values are in agreement with those of Kaplan obtained from CR at low fields. This leads to a conclusion that the conduction band in 3C-SiC is very parabolic up to 53.8 meV, and that unlike GaP the effect of camel's back structure is unobservable. A number of impurity transitions were observed for the first time at temperatures below 100 K with photon energies ranging from 34.4 to 73.2 meV. It was found that the observed lines originate from three different donor states which have different binding energies, E(sub d) = 19, 35 and 53 meV. The first observation of hole CR was also made in p-type 3C-SiC. A broad but prominent peak was observed with an effective mass of 0.45m(sub 0), at temperatures around 210 K and at wavelength of 119 micrometers.