Smart microsensors for high temperature applications
Abstract
The following document details the results of efforts to develop a high temperature sensor technology based in Kopin's proprietary ISE SOI material. Results are presented from a detailed analysis of the piezoresistive properties, and of the internal stress in the layer. These results show the material to be electrically similar to bulk, with very low internal stress. This makes ISE(tm) an ideal material choice for this application. A full sensor process sequence, with mask set, and enabling process equipment and techniques, was developed for this program. In parallel with the process development, extensive circuit analysis and modeling was performed to identify the best high temperature sensing circuit for this task. After modeling, test circuits were fabricated in bulk wafers to evaluate the design. The final design, a switching capacitive MOS circuit with proportional output, is expected to produce a sensor with 0.1 percent accuracy over the temperature range of -60 C to 300 C. Kopin is currently pursuing industrial financing for Phase 3 of this work to complete the integration of this work for commercial application.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- January 1993
- Bibcode:
- 1993STIN...9325677V
- Keywords:
-
- Cmos;
- High Temperature Environments;
- Metal Oxide Semiconductors;
- Pressure Sensors;
- Silicon;
- Chips (Electronics);
- Circuits;
- Fabrication;
- Insulators;
- Masks;
- Pressure Measurement;
- Thin Films;
- Wafers;
- Instrumentation and Photography