Electrical Transport Properties of Nb-DOPED SrTiO3 Fabricated on MgO(100) and SrTiO3(100) Substrates by Reactive Evaporation Method
Abstract
Undoped and Nb-doped SrTiO3 films have been fabricated on SrTiO3(100) and MgO(100) substrates at temperatures between 500°C and 800°C by a reactive evaporation method. The single-crystallinity of these films was confirmed by X-ray diffraction and RHEED studies. Better crystallinity was obtained for films fabricated at substrate temperatures of 700°C and 800°C. Metallic behavior was found in the resistivity vs. temperature relation for all the films with Nd concentration between ~ 0.5 wt.% and ~ 5wt.%. Hall mobility measurements revealed that the carriers are electrons in all the Nb-doped films. The mobility decreases with increasing temperature for all the Nb-doped samples. The Hall mobility measurements for the highly Nb-doped (~ 5 wt.%) film revealed that a larger mobility is obtained for films grown at higher substrate temperatures.
- Publication:
-
Modern Physics Letters B
- Pub Date:
- 1993
- DOI:
- 10.1142/S0217984993000539
- Bibcode:
- 1993MPLB....7..543N