Lateral-Solid Phase Epitaxial Growth of Single-Crystal Al(110) Films over Striped SiO2 Patterns
Abstract
Aluminum films deposited by the conventional DC magnetron sputtering method over striped SiO2 patterns were single-crystallized by the lateral-solid phase epitaxial (L-SPE) growth method. Single-crystal Al(110) films deposited on striped Si(100) patterns were used as seed areas. The crystal structure of the films was investigated utilizing transmission electron microscopy (TEM), electron diffraction, X-ray diffraction (XRD) and optical microscopy. The grain density along L-SPE grown aluminum lines is influenced by the epitaxial growth direction. The result suggests the existence of anisotropy in the grain boundary energy of L-SPE grown aluminum films.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- September 1993
- DOI:
- 10.1143/JJAP.32.3950
- Bibcode:
- 1993JaJAP..32.3950K