A new N-type doping precursor for MOCVD-IMP growth of detector quality MCT
Abstract
A new indium precursor, triisopropyl indium (TIPIn), has been used for doping MCT at low carrier concentrations. Previous attempts using indium organometallics resulted in a strong memory effect where residual doping would persist for many growth runs. Introducing TIPIn on the tellurium inject line resulted in a similarly strong memory doping but this was not observed when feeding the dopant in on the cadmium injection line. The TIPIn is believed to have been forming a low volatility adduct with diisopropyl tellurium (DIPTe) in the feed line and to have continued to evaporate at a low but significant rate. By keeping the TIPIn and DIPTe precursors separate until they entered the reactor, the desired low 1015 cm‑3 carrier concentration and flat indium profiles could be achieved with good reproducibility. Good electrical characteristics were measured for these layers with Auger limited lifetime >1 μs at 77K.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- August 1993
- DOI:
- 10.1007/BF02817498
- Bibcode:
- 1993JEMat..22..859I
- Keywords:
-
- Detector quality;
- HgCdTe;
- LPE;
- MOCVD-IMP growth;
- n-type doping