Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide Taur, Y. ; Cohen, S. ; Wind, S. ; Lii, T. ; Hsu, C. ; Quinlan, D. ; Chang, C. A. ; Buchanan, D. ; Agnello, P. ; Mii, Y. -J. ; Reeves, C. ; Acovic, A. ; Kesan, V. Abstract Publication: IEEE Electron Device Letters Pub Date: June 1993 DOI: 10.1109/55.215206 Bibcode: 1993IEDL...14..304T