Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers
Abstract
Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017-1018 cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10-9 cm3 s-1. For densities exceeding approximately 2×1018 cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1993
- DOI:
- 10.1063/1.109980
- Bibcode:
- 1993ApPhL..63..571B