Research on the stability, electronic properties, and structure of a-Si:H and its alloys
Abstract
The objective is to obtain a comprehensive understanding of structure and electronic properties of a-Si:H as they apply to solar cells. First observations were of light enhancement and field suppression of H diffusion in a-Si:H. Theoretical studies were made of hydrogen density of states distribution and its relation to defect metastability. Reduced density of light induced defect is observed in a-Si:H deposited in a remote hydrogen plasma reactor at 400 C. Kinetics of metastable defect creation using forward bias in a p-i-n diode to induce defects were studied and compared to light-induced defect creation in the same devices. Studies were made of transport at high electric field and low temperature. Detailed studies were made of the kinetics of dopant metastability in n-type and p-type a-Si:H.
- Publication:
-
Unknown
- Pub Date:
- December 1992
- Bibcode:
- 1992rsep.rept.....S
- Keywords:
-
- Amorphous Silicon;
- Atomic Structure;
- Bias;
- Crystal Defects;
- Metastable State;
- P-I-N Junctions;
- Solar Cells;
- Chemical Bonds;
- Electric Fields;
- Hydrogen Plasma;
- Hydrogenation;
- Low Temperature;
- Solid-State Physics