Group 2 cubic fluorides dielectrics for 3-D integration and GaAs-based optoelectronic structures
Abstract
The epitaxial growth of Ca(x)Sr(1-x)F2/GaAs(100) GaAs/Ca(x)Sr(1-x)F2(100) is investigated. Optimum growth temperature of 530 C growth rate of 1 A/sec and composition x = 0.47 lead to very high crystallinity layers of mixed fluorides on GaAs. The growth of GaAs/Ca(0.47)SrO(.053)F2(100), rendered much more difficult by the morphology and faceting of the insulating surface, is substantially improved by modifying the fluoride surface by electron irradiation prior to GaAs growth, and by a two-step growth sequence where the interface GaAs is grown at low temperature (300 C). Finally, the patterning of the fluoride layer is performed by e-beam exposure. Features as small as 1 micron are drawn and developed on a 2000 A thick CaF2 layer, opening the possibility of using the fluorides for wave-guides or re-growth of small 3-5 features.
- Publication:
-
Princeton Univ. Report
- Pub Date:
- August 1992
- Bibcode:
- 1992prnc.rept.....K
- Keywords:
-
- Calcium Fluorides;
- Dielectrics;
- Electro-Optics;
- Fluorides;
- Gallium Arsenides;
- Gallium Compounds;
- Molecular Beam Epitaxy;
- Semiconductors (Materials);
- Strontium Compounds;
- Crystallinity;
- Electron Beams;
- Electron Irradiation;
- Insulation;
- Low Temperature;
- Solid-State Physics