Growth of 2-6 thin-films from single-source precursors based on sterically encumbered sitel ligands
Abstract
We have developed a new route to MOCVD of 2-6 compounds based on the use of novel single-source precursors in which the 2-6 elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium, and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel)(sub 2) where sitel = -TeSi(SiMe)(sub 3). The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.
- Publication:
-
Presented at the 6th International Conference on Metalorganic Vapor Phase Epitaxy
- Pub Date:
- April 1992
- Bibcode:
- 1992mvpe.conf....8A
- Keywords:
-
- Crystallinity;
- Ligands;
- Metalorganic Chemical Vapor Deposition;
- Pyrolysis;
- Thin Films;
- By-Products;
- Cadmium;
- Covalence;
- Nitrogen;
- Stoichiometry;
- Zinc;
- Solid-State Physics