Annealing study of main electron irradiation-induced defects (H4 and H5) in P-InP using DLTS technique

Thermal annealing of the two hole traps H(sub 4) and H(sub 5) in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10(sup 14) and 10(sup 16) e/cm(sup 2). DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H(sub 5) anneals out at about 150 C(sup o) with an activation energy of 1 eV. We have shown that H(sub 4) is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with (Delta)E = 0.37 eV anneals out at about 110 C(sup o). The other component, with (Delta)E = 0.50 eV is thermally stable even above 170 C(sup o).