On the suitability of non-hardened high density SRAMs for space applications
Abstract
Several non-radiation-hardened high density static RAM's (SRAM's) were tested for susceptibility to single-event upset (SEU) and latchup. Test results indicated that at present only a few such device types are suitable for use in space applications. Several additional factors such as susceptibility to multiple-bit upsets and to radiation-induced permanent damage need to be taken into consideration before these device types can be recommended. One non-hardened SRAM device type has recently been used on a low-Earth orbit satellite, enabling the upset rate measured in space to be compared to that predicted from ground-based testing.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- July 1992
- Bibcode:
- 1992STIN...9314087K
- Keywords:
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- Artificial Satellites;
- Ground Tests;
- Latch-Up;
- Radiation Damage;
- Random Access Memory;
- Semiconductor Devices;
- Single Event Upsets;
- Air To Surface Missiles;
- Earth Orbits;
- Nuclear Explosions;
- Spacecraft Design, Testing and Performance