Effect of metallization process on the performance of passive microstripline circuits
Abstract
The study examines the coupling and isolation of a 10-dB directional coupler, midband rejection of lambda/2 rejection filter, and transmission and reflection coefficients of microstriplines in the X band (8-11) GHz. Different metallization processes are used to delineate the circuits photolithographically on alumina substrates metallized by aluminum and copper. The adhesion and dc resistivity are also compared. It is concluded that aluminum, in spite of showing higher dc resistivity, can be used as a conductor for microwave integrated circuits. The dc ion plating plus electroplating method of metallization with some modifications can prove to be a very good cost-effective alternative for obtaining micron-thickness films. The better adhesion property of ion-plated films added to the low cost of electroplating chemicals and apparatus and also the elimination of bonding layer materials can be a very viable alternative metallization process for MIC and hybrid electronics.
- Publication:
-
Microwave and Optical Technology Letters
- Pub Date:
- October 1992
- Bibcode:
- 1992MiOTL...5..585P
- Keywords:
-
- Directional Couplers;
- Integrated Circuits;
- Metallizing;
- Microstrip Devices;
- Microwave Transmission;
- Reflectance;
- Aluminum Oxides;
- Electroplating;
- Ion Plating;
- Photolithography;
- Q Factors;
- Substrates;
- Superhigh Frequencies;
- Electronics and Electrical Engineering