1.5 μm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition
Abstract
Very low threshold current densities of 640 A/cm2, 400 A/cm2 and 200 A/cm2 were obtained in 1.5 μm GaInAs/AlGaInAs lattice matched, compressive and tensile strained-layer quantum well laser diodes (SL-QW LDs) respectively, grown by organometallic chemical vapor deposition, with continuously graded-index separate-confinement-heterostructure. The polarization of output power for a tensile SL-QW LD showed transverse magnetic (TM) mode, while that for a lattice matched and a compressive SL-QW LDs showed transverse electric (TE) mode. A very low threshold current of 3.6 mA was obtained in a buried heterostructure compressive SL-QW laser diode grown by two-step organometallic chemical vapor deposition.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- May 1992
- DOI:
- 10.1143/JJAP.31.1365
- Bibcode:
- 1992JaJAP..31.1365K
- Keywords:
-
- Aluminum Arsenides;
- Gallium Arsenide Lasers;
- Indium Gallium Arsenides;
- Metalorganic Chemical Vapor Deposition;
- Quantum Wells;
- Current Density;
- Electron Microscopy;
- Laser Outputs;
- Quantum Efficiency;
- Temperature Dependence;
- Electronics and Electrical Engineering