Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
Abstract
Transient light-induced electron spin resonance (LESR) at 120 K has been used to investigate the light-soaking behaviors and the role of hydrogen in the stability of a-Si:H through changes in the lineshape. Dramatic changes occur in the LESR lineshape upon prolonged light-soaking, and we suggest that hydrogen defects (Si-H2 or clustered Si-H bonds) play an important role in these changes. A microscopic explanation of the possible optical excitations and defect conversion processes leading to these changes during the LESR experiment is proposed.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- April 1992
- DOI:
- 10.1143/JJAP.31.995
- Bibcode:
- 1992JaJAP..31..995S
- Keywords:
-
- Amorphous Silicon;
- Electron Paramagnetic Resonance;
- Hydrogen;
- Light (Visible Radiation);
- Silanes;
- Band Structure Of Solids;
- Chemical Bonds;
- Degradation;
- Energy Gaps (Solid State);
- Solid-State Physics