CdTe crystals grown by chemical vapour deposition
Abstract
The crystal growth parameters and various optical and electrical characterizations of crystals obtained by CVD are presented. These crystals were grown through direct combination of the elements in the vapor phase at 720 C. The presence of trapping centers was investigated via photoinduced transient spectroscopy measurements with chopped tungsten light, and four-probe resistivity measurements were conducted.
- Publication:
-
Journal of Materials Science Letters
- Pub Date:
- February 1992
- Bibcode:
- 1992JMSL...11..143M
- Keywords:
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- Cadmium Tellurides;
- Crystal Growth;
- Semiconducting Films;
- Vapor Deposition;
- Infrared Detectors;
- P-Type Semiconductors;
- Solar Cells