Reliability of gallium arsenide devices
Abstract
Reliability studies are conducted of commercially available GaAs signal transistors to assess their applicability for spaceborne RF systems such as X-band transmitters and S-band beacon receivers. High-electron-mobility transistors (HEMTs), MESFETs, power MESFETs, and a digital-process control-monitoring device are subjected to failure analyses with SEM and X-ray detectors during operation. Small defects in the HEMTs are found to cause localized heating and eruptions during dc-biased accelerated life testing leading to the loss of gate control and the inability to pinch of the HEMTs. Initial gate-to-source and gate-to-drain leakage currents should be less than 1 microA for successful operation. Signal GaAs MESFETs are found to be highly reliable, and digital GaAs devices can be used following burn-in. The use of GaAs MESFETs for long-term space applications is feasible when these constraints are considered.
- Publication:
-
Johns Hopkins APL Technical Digest
- Pub Date:
- September 1992
- Bibcode:
- 1992JHATD..13..407M
- Keywords:
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- Component Reliability;
- Crystal Defects;
- Failure Analysis;
- Gallium Arsenides;
- Satellite-Borne Instruments;
- Burnout;
- Field Effect Transistors;
- High Electron Mobility Transistors;
- Process Control (Industry);
- Electronics and Electrical Engineering