LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires
Abstract
Lattice matched Ga 0.5In 0.5P/GaAs single interfaces, single quantum wells (QW) and finally quantum wires on mesa-like selective GaAs were grown by LP-MOVPE. The photoluminescence (PL) of GaInP/GaAs QW shows an anomalous emission band of high intensity below the GaAs band gap. The effect of the growth temperature, AsH 3 partial pressure, gas switching sequence and growth interruption times on these new PL features was investigated. The formation of GaInPAs layers at the GaInP-to-GaAs interface, due to the substitution of P to As, is responsible for the anomaly in the luminescence. The stability of the GaInP/GaAs interfaces was checked after growth by rapid thermal annealing (RTA). Intermixing at the GaInP/GaAs heterointerfaces was also considered. The introduction of a 1 nm thick GaP barrier between the GaInP and GaAs layer was enough to suppress the GaInPAs intermediate layers and large area quantum wells and wires were successfully grown.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- November 1992
- DOI:
- 10.1016/0022-0248(92)90460-Z
- Bibcode:
- 1992JCrGr.124..199G